| PART |
Description |
Maker |
| MPS6573 MPS6576 |
NPN SILICON ANNULAR TRANSISTORS
|
New Jersey Semi-Conductor Products, Inc.
|
| MPS3826 MPS3827 |
NPN SILICON ANNULAR TRANSISTORS
|
New Jersey Semi-Conductor Products, Inc.
|
| MD7003A MD7003AF MD7003F MD7003B MQ7003 |
MULTIPLE SILICON ANNULAR TRANSISTORS
|
New Jersey Semi-Conduct...
|
| MD7002 MD7002A MD7002B |
NPN SILICON ANNULAR MULTIPLE TRANSISTORS
|
New Jersey Semi-Conduct...
|
| 2N5431 |
PN SILICON ANNULAR UNIJUNCTION TRANSITOR
|
Digitron Semiconductors
|
| MPSU57 |
PNP SILICON ANNULAR AMPLIFIER TRANSISTOR
PNP SILICON ANNULAR AMPLIFIER TRANSISTOR
|
New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conduct...
|
| 121-007-28E 121-007-28H 121-007-28N 121-007-28V 12 |
72 Annular Convoluted Tubing Thermally Stabilized Kynar
|
Glenair, Inc.
|
| 121-015-12E 121-015-12H 121-015-12N 121-015-12V 12 |
72 Annular Convoluted Tubing Thermally Stabilized Kynar
|
Glenair, Inc.
|
| 2N6290 2N6473 2N6476 2N6293 2N6110 2N6107 2N6108 2 |
EPITAXIAL-BASE/ SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
SMA FEMALE POWER DIVIDER; NUMBER OF OUTPUT PORTS: 4; FREQUENCY RANGE: 0.5 - 1 GHz; MINIMUM ISOLATION: 20 dB; VSWR: 1.30 MAXIMUM; MAXIMUM INSERTION
EPITAXIAL-BASE SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
|
Boca Semiconductor Corp.
BOCA[Boca Semiconductor Corporation]
|
| 710-860 |
Direct Attachment Guardian T Transition For Series 72 Annular Convoluted Tubing
|
Glenair, Inc.
|
| BDX53B BD53C BDX54C ON0205 BDX53C BDX54B |
From old datasheet system
8 AMPERE POWER TRANSISTORS
Plastic Medium-Power Complementary Silicon Transistors
DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 80-100 VOLTS 65 WATTS
|
Motorola Inc
MOTOROLA[Motorola Inc]
Motorola, Inc
ON Semiconductor
|
| PN4037 PN3053 2N-PN3053 2N-PN4037 2N3053 |
SILICON PLANAR EPITAXIAL TRANSISTORS
COMPLEMENTARY SILICON TRANSISTORS
|
MICRO-ELECTRONICS[Micro Electronics]
|
